Design and performance analysis of 20nm 5-fin SOI FinFET for different channel materials

Due to scaling of traditional MOS devices into nanometer range, the constraints like power and performance restrict its lastingness in future circuit design. The trigate FinFET has emanated as propitious device for better electrostatic characteristics in terms of Short Channel Effects (SCEs) etc. In this work, the design and analysis of 5-fin SOI FinFET at 20nm technology has been done using 3 Dimensional Cogenda Technology Computer-Aided Design numerical simulators (3D Cogenda TCAD) for different channel material. The device simulations are based on the self-consistent solution of Poisson and drift diffusion equations. The Electrical performance of multifin SOI FinFET for different channel material like Si, GaAs, SiGe and SiC3C are demonstrated. It was observed that SiC3Cas channel material presents maximum I_on/Ioff ratio (1.90E+11) and minimum leakage current (7.00E-19 A), whereas GaAs channel material has improved Subthreshold Swing (58mV/dec) as compared to others. The Silicon channel exhibits highest value of I_on i.e. 5.03E-06A.