A novel level-shifter integrated on the edge termination region of the high voltage device

A novel level-shifter consisting of one LDMOS and one P-i-N diode integrated on the High Voltage Edge Termination (HVET) region in the high-side region is proposed. Thus the area of the level-shifter is saved, and the interconnection-induced pre-breakdown is avoided. The simulation results verify the required level-shifting function of the integrated structure.