Analysis of inherent properties of sige hetero-structure device using analytical modeling and simulation

In this paper, analytical and simulation based analysis to verify the inherent properties of SiGe HBT is done. The major performance parameters of SiGe HBT are cut-off freuency fT, maximum oscillation frequency fmax, base transit time τb, current gain β and electron mobility μn of SiGe base. These performance parameters are responsible for the reliability of SiGe HBT. Temperature is one of the major reliability issues. The impact of temperature variation on these performance parameters is analyzed using Silvaco Atlas Device Simulator along with analytical modeling.