A precipitation modeling of implantation induced defects

This paper reports Monte Carlo calculation of the bimolecular reaction of extended defects which successfully predicts both the as-implanted impurity profiles (SIMS) and the diffusion profiles for a wide range of implant and annealing conditions. We developed a general kinetic model of extended defects, which explicitly takes the time evolution of size density of extended defects into account in an effort to cover a broad range of behaviors. Our Monte Carlo calculation is in quantitative agreement with the experimental deactivation data and successfully reproduces the rapid deactivation at the beginning phase followed by slow deactivation thereafter.