Simulation and experimental study of ZnO thin film deposited over p-Si with Al contact

This paper comes with Zinc Oxide (ZnO) thin film deposition over virtually grown p-Si substrate and fabricated using the E-beam evaporation PVD technique. The simulation analysis of ZnO TF/p-Si introduces photo-generation rate, spectral response that has been carried out using the Silvaco ATLAS software. The surface morphology and structural characterization has been done by Field Emission Scanning Microscopy (FESEM) and X-Ray Diffraction (XRD) analysis. The electrical characterization is verified in dark and light condition which shows the rectifying behavior of the Al schottky contact. The turn-on voltage is around 1V for the device.