A system for radiation damage monitoring

An automatic radiation damage monitoring system has been developed and tested. The system is based on two passive sensors for the measurement of integral ionizing and non-ionizing energy losses in silicon devices. Ionizing dose is measured in terms of dose in SiO/sub 2/ and displacement damage in terms of 1 MeV(Si) equivalent neutron fluence. The system uses MOSFETs and PIN dosimetric diodes.