A new compact edge termination for 4.5-kV silicon power devices

A new compact and easy-to-achieve edge termination featuring the n-p double rings and all-cover field plates is presented for silicon high-voltage devices. This structure can divide and share much more voltage at each n-p double ring than its conventional counterpart does and thus largely shrink the lateral spreading of the depletion region. At a given blocking voltage, it helps save the chip area, and lower the leakage current. Simulation results show that, with a total width of only 1.6 mm, this edge termination can support nearly 5.8 kV under the conditions given in this paper. Further studying for the new termination includes the control of the surface electric-field peaks at high voltages and the variation of the breakdown voltage with the fixed oxide charge.