Abstract:
The samples of porous InP were grown up by a method of anode electrochemical etching on a substrate (100) InP n-type. The samples were characterized by scanning electroni...Show MoreMetadata
Abstract:
The samples of porous InP were grown up by a method of anode electrochemical etching on a substrate (100) InP n-type. The samples were characterized by scanning electronic microscopy (SEM) and photoluminescence (PL) where a blue shift was observed in PL. To remove surface oxides from the surface of porous InP using the thermal cleaning of the samples in a stream of high purity hydrogen. Chemical composition of surface of porous n-InP after in hydrogen probed treatment the method of Energy dispersive X-ray spectroscopy. Size of walls between pores which makes 3-11nm.
Date of Conference: 10-15 September 2017
Date Added to IEEE Xplore: 14 December 2017
ISBN Information: