Simulation of solo GaN IGBTs

This paper reports simulation of punch-through gallium nitride (GaN) insulated gate bipolar transistors (IGBTs) with different drift layer thicknesses of t=12 μm and t=17 μm delivering breakdown voltages of V_BD=600V and V_BD=700V, respectively. The simulated devices are enhancement-mode with the threshold voltage of +3.5V. The leakage current in proposed devices are in the range of 10^-9 A/μm. Using GaN, a significant improvement in blocking capability of IGBTs for a given epithickness is observed. The GaN IGBTs have been simulated and analyzed by Silvaco atlas toolbox.