An analysis of electrical characteristics of 0.22 /spl mu/m triple well CMOS device by FA and RTA processes

We fabricated 0.22 /spl mu/m triple well CMOS with deep p-well, doped with 1/spl times/10/sup 14/ B ions/cm/sup 2/, implanting with energy of 1.7 MeV by using high energy ion implantation equipment and thermal processes at 950/spl deg/C, 30 min by FA and at 1100/spl deg/C, 30 sec by RTA. The electrical characteristics which were compared and analyzed for each thermal treatment are junction leakage current and junction breakdown voltage and sub-threshold current- and latch-up immunity. We propose that RTA is superior to FA in thermal process from the viewpoint of electrical characteristics. We obtained excellent leakage currents and junction breakdown voltage characteristics by RTA process.