Study of 1200 V SiC JFET cascode device

This paper is focused on studying a 1200V SiC JFETs cascode device released recently. The gate drive circuit design and switching performance are compared with its counterpart, 1200 V SiC MOSFETs. The research finds out the gate drive circuit design of SiC JFETs cascode is similar to that of SiC MOSFETs. In addition, an optimized gate driver is designed to minimize the device switching loss without causing “crosstalk” issue. The experimental results of DPT (single pulse test) and MPT (multiple pulse test) are provided to verify the proposed optimized gate driver and compare the switching performance of two devices.