An overview of advances in high reliability gate driving mechanisms for SiC MOSFETs

SiC power devices exhibit low on-resistance and are capable of processing high switching frequencies at elevated temperatures. When SiC MOSFETs are employed as switch, minimizing switching power losses is crucial. A proper design of gate driving circuit for SiC MOSFET can ensure minimum losses, safe operation of the device and reliable performance. A comparative study of gate drivers for SiC MOSFETs in current literature is presented in this paper.