Mixed-mode circuit simulation to characterize Ga2O3 MOSFETs in different device structures

Two gallium oxide (Ga₂O₃) MOSFETs, a non field plated (NFP) device and a field plated (FP) device, are proposed and simulated in Silvaco TCAD. The static characteristics of the devices were obtained from Silvaco TCAD and the characterization of switching performance was conducted in Silvaco mixed-mode with inductive load test circuit. To study the influence of the thickness of the field plate oxide (T_FPOX), another FP device with different T_FPOX is investigated. The simulated devices were compared with commercially available silicon carbide (SiC) MOSFETs in a three phase modular multilevel converter (MMC) to predict their performance in high power application.