A low-supply SI-cell using threshold control

A low-voltage self-biased class AB memory cell for low-power high-precision applications is presented. Because of operation in class AB and due to self-biasing, the cell achieves a high dynamic range and a low harmonic distortion. A threshold control technique, applied to fix the cell quiescent current, is also described. A lossless integrator using this cell in a 0.5 /spl mu/m technology shows a dynamic range of 15 bits, a THD lower than -90 dB for a clock frequency of 1 MHz and a power consumption of 0.23 mW.