A universal smart control IC for high-power IGBT applications

Increasing electrical requirements to more reliable and sophisticated driver technology to turn on and turn off IGBT or MOSFET power semiconductors, a new universal smart control integrated circuit (IC) for IGBT-Intelligent Power Modules (IPM) is presented. It is usable for high-power applications up to 3,500 V for several hundred amperes and frequencies up to 50 kHz. The concept includes several driver, protection and monitor functions, such as a short pulse suppression, a mutual interlock of IGBTs, an undervoltage monitoring of the operating voltage, an optional V/sub CE/-temperature- and current-monitoring of the IGBT and a common error processing. The potential separation and the specific gate driver stages are separated. The IC is designed and manufactured in a high voltage CMOS technology. This paper comprises a detailed discussion of customers advantages due to the implementation of the SKIC2001 in terms of reliability, flexibility of control and increasing performance when paralleling high power modules.