Peculiarities of implantation of silicon with intensive beams of B/sup +/ and BF/sub 2//sup +/ ions

The comparison of results on implantation of B/sup +/ ions and molecular ions BF/sub 2//sup +/ into silicon at density of ion beam current (j) up to 120 /spl mu/A cm/sup -2/ has been conducted. The investigation of the kinetics of changes in structure of implanted layers, profiles of distribution of introduced impurities and degree of electrical activation of boron atoms showed that only molecular ions stimulate sufficient dynamic processes during irradiation. This dynamic process causes electrical activation of boron and the shift of its distribution profile towards the surface.