Modeling the as-implanted distribution of antimony and indium

As the critical dimensions of devices continue to shrink the opportunity to use alternative dopants to provide solutions for several front end processes increases. However, proper modeling tools to accurately estimate the distribution of these species will be required to minimize the costs of process development. For future CMOS devices, both indium and antimony are promising for channel implants, and might be promising for source/drain and extensions in the distant future. Several software solutions are available to model as-implanted and annealed dopant profiles. These models have been compared to SIMS data and verified for use by IC fabrication process engineers.