Characterisation of ultra-shallow junctions using advanced SIMS, SRP and HRTEM techniques

B+/1 keV implants have been studied using SIMS, looking in detail at the as-implanted depth profile, to distinguish the true dopant distribution from measurement artefacts. Different SIMS machines and ion energies have been compared, and wafer pre-processing before analysis used to examine the low concentration profile tail. Annealed samples have also been studied, and high depth resolution analysis carried out of the near surface fine structure. The data has been compared with SRP and HRTEM, and used to assign peaks and discontinuities in the profile to dopant states and interfaces.