Taurus Monte Carlo calibration for boron ion implantation applied on UHV LDMOS with uniform P-top

Behavior of doping profile will affect the device performance dramatically as shown in this work. To get better prediction accuracy on device simulation, calibration based on electronic stopping power adjustment is applied on Taurus Monte Carlo implantation model according to Secondary Ion Mass Spectrometry (SIMS). Well determined particle number of calibrated Taurus Monte Carlo is used to simulate UHV LDMOS with uniform P-top in comparison with other implantation models. Electric field distribution and breakdown voltage are presented as parameter comparison.