A new quasi-3-D subthreshold current/swing model for fully-depleted quadruple-gate (FDQG) MOSFETs

Based on the parabolic potential approach (PPA) and equivalent number of gates (ENG), a new quasi-3-D subthreshold current/swing model for the fully depleted quadruple-Gate (FDQG) MOSFET is developed. The model explicitly shows how the channel length, gate oxide thickness, and silicon film thickness affect the subthreshold current/swing behavior. The model is verified by its calculated results matching well with those of the three-dimensional device simulator and can be used to investigate the subthreshold current/swing for the short-channel QG MOSFETs.