Steep current transition in germanium junctionless transistor

We report on the gate misalignment induced asymmetry to enhance the impact ionization in Germanium (Ge) Junctionless (JL) devices by localizing the carrier depletion to a narrow region of the semiconductor film. Results show that misaligned Ge JL MOSFET can exhibit higher values of impact ionization power per unit volume which leads to a sharp current transition with nearly an ideal Subthreshold swing (S-swing) ~1 mV/decade at a drain bias of 0.9 V at room temperature.