A fully integrated 1 GHz BiCMOS VCO

A low phase noise monolithic VCO using Cu high-Q spiral inductors is presented. A new feature is the use of current mirrors to provide ratioed gain, low voltage operation and high output swing with low power consumption. The circuit has been designed in an advanced 0.6 /spl mu/m BiCMOS technology. Tuning is performed using on-chip Schottky barrier diode varactors, providing 72 MHz tuning range around a 1.04 GHz center frequency. At 600 kHz offset from the carrier the simulated phase noise level is -122 dBc/Hz which meets GSM requirements. The oscillator draws 7 mA from a 3 V supply voltage and can properly operate with a supply above 1 V.