Photoresist effects on wafer charging control: current-voltage characteristics measured with Charm-2 monitors during high-current As/sup +/ implantation

The effects of ion energy, accumulated dose, photoresist coverage and patterning were studied for As/sup +/ implants at 40, 60 and 120 keV and total doses from 1/spl times/10/sup 14/ to 10/sup 16/ As/cm/sup 2/. The effect of photoresist coverage, ion energy and dose on positive and negative potentials and j-V characteristics are presented. J-V data are fit with a beam plasma model that describes both positive and negative charging with a consistent set of plasma parameters.