Low-bias high-speed modified uni-traveling-carrier photodiode

In this paper, the high-speed modified uni-traveling-carrier photodiode (MUTC-PD) was designed and fabricatedfor low reverse bias. The 3-dB bandwidth and responsivity of MUTC-PD with 24-μm mesa diameter at 1-V reverse bias is 22.5 GHz and 0.22 A/W at the wavelength of1550 nm, respectively. The dark current of the device is less than 4nA at 3.3 V reverse bias. The fabricated device can achieve high performance at low reverse bias is confirmed.