Integrated photonic platform based on semipolar InGaN/GaN multiple section laser diodes

The challenges to realizing Ill-nitride photonic integrated circuit (PIC) are discussed. Utilizing InGaN-based multi-section laser diode (LD) on semipolar GaN substrate, the seamless on-chip integration of III-nitride waveguide photodetector (WPD) in the visible regime has been demonstrated.