Effects of uniaxial strain on polar optical phonon scattering and electron transport in monolayer MoS2 FETs

In this work, we first calculate the effects of uniaxial strain on polar optical phonon (POP) scattering rates in monolayer MoS
₂
. We then study the effects of strain on electron transport in a monolayer MoS
₂
based FET device employing a fully 3-D particle based quantum-corrected Monte Carlo device simulator. Our results show that, for both E
⁺
and E
^-
Raman modes, the current first increases for up to 4% of applied strain, then it drops as the strain is further increased.