Charge-trapping characteristics of BaTiO3 with various Zr contents for flash memory applications

The charge trapping characteristics of BaTiO₃ film with various Zr contents were investigated based on Al/Al₂O₃/BaTiO₃/SiO₃/Si structure. The device with an appropriate Zr incorporation shows higher performance than the one without Zr doping, including higher operating speeds and better data retention. However, excessive Zr doping in BaTiO₃ degrades the device performance mainly due to increased dielectric loss and reduced barrier height between the charge-trapping layer and the SiO₃ tunneling layer.