Effect of synthesis conditions on ZnO thin film photosensitivity via mSILAR technique

Zinc oxide (ZnO) nano-polycrystalline thin film has been synthesized by microwave-assisted successive ionic layer adsorption and reaction (mSILAR) technique. The prepared samples were annealed in air and an inert atmosphere. X-ray diffraction (XRD) studies confirm the presence of hexagonal wurtzite ZnO structure in both synthesized films. The field emission scanning electron microscope (FESEM) revealed the flowered nature of ZnO films. The semiconductor characteristic of the samples was analyzed by using current-voltage (I-V) curves. The electrical resistance and photoconductivity studies of the samples were investigated with and without electron beam irradiation. We provide evidence for the photosensitivity enhancement for the sample prepared in the inert condition by irradiation. We demonstrate the electrical, temperature sensing, and photo conducting properties can be varied to a required level by electron beam irradiation.