Excellent field emission properties of vanadium oxide nanoemitters in air

VO₂ (A) emitters with 10 nm gap between the cathode and anode were fabricated with the aid of focus ion beam etching. Excellent field emission properties were achieved under atmospheric conditions with turn-on voltage as low as 0.6 V and good emission stability over 30 minutes. This work provides a practical way to eliminate the vacuum needs of the field emission devices and has potential use in future nanoscale field emission devices such as vacuum field emission transistors.