Design and modeling of HEMT using field plate technique

The High Electron Mobility Transistor (HEMT) is a form of field effect transistor (FET), that is used to provide very high levels of performance at microwave frequencies. The HEMT offers a combination of low noise figure combined with the ability to operate at the very high microwave frequencies. Accordingly the device is used in areas of RF design where high performance is required at very high RF frequencies. The HEMT was originally developed for high speed applications. It was only when the first devices were fabricated that it was discovered they exhibited a very low noise figure. This is related to the nature of the two dimensional electron gas and the fact that there are less electron collisions. As a result of their noise performance they are widely used in low noise small signal amplifiers, power amplifiers, oscillators and mixers operating at frequencies up to 60 GHz and more and it is anticipated that ultimately devices will be widely available for frequencies up to about 100 GHz. In fact HEMT devices are used in a wide range of RF design applications including cellular telecommunications, Direct broadcast receivers — DBS, radar, radio astronomy, and any RF design application that requires a combination of low noise and very high frequency performance. In this paper, Analysing various parameters such as I-V characteristics, Vth, Id, e-mobility, e-velocity, e-temperature, of AlGaN/GaN high-electron mobility transistors (HEMT) influence of the field-plate Technique.