Broadband and high-speed 1300nm electroabsorption modulator using InAlGaAs multiple quantum wells

High-bandgap offset 1300nm InAlGaAs quantum well (QW) has been used for electroabsorption modulator. High conduction/valance bandgap offset ratio allows strong exciton effect under high electric field, leading to broadband operation. >10dB extinction ratio from 1280nm to 1320nm and 40GHz of electical-to-optical response has been demonstrated.