Analysis of GaSb-based vertical cavity surface emitting lasers at λ = 3.93 μm

GaSb-based electrically-pumped vertical-cavity surface-emitting lasers at 3.93 μm, using type-II quantum wells are analyzed. Current broadening due to radial diffusion of carriers in the active region is estimated to be 4.2 μm and this is determined to be a major factor in limiting their performance.