64 MeV Proton Single-Event Upset Characterization of Customer Memory Interface Design on Xilinx XCKU040 FPGA

This paper examines the single-event upset response of a customer memory interface design on the Xilinx 20nm XCKU040 Field Programmable Gate Array (FPGA) irradiated with 64MeV proton source. Results for single-event upsets on configuration RAM (CRAM) cells are provided. The difference between architectural vulnerability factor (AVF) and design vulnerability factor (DVF) of the customer memory interface design is also discussed in this work.