A preliminary study on VDMOS and IGBT encapsulation, reliability and lifetime killing

A comparative study on medium voltage VDMOS and IGBT devices (internal cell, electrical characteristics) demonstrate the similarity of both devices. Consequently, the VDMOS structures were used as test vehicle for encapsulation, reliability and lifetime killing studies. It was found that the base material characteristics play a main role in the encapsulation yield and assure better reliability capability. The electron irradiation assures an effective and perfect controllable lifetime killing with adjacent threshold voltage reduction and breakdown voltage increasing.