Amplifiers based on field-effect transistor (FETs) for solid radar RLS

The use of solid devices in the transmitting part of the radar is associated with the use of transistor amplifiers and antennas, which provide summation of the powers from the output of each module. The characteristics of transistors used in such modules are subject to strin-gent requirements. In the article, amplifiers of ultrahigh frequencies for the radar station are considered. A general description of two amplifier circuits is provided: on transistors 2Π988, powerful field effect transistors of 2Π998A and 2Π980°C types. Comparative characteristics of amplifiers are given. It is shown that the transition to field LDMOS transistors of the new generation provides an increase in power by 30%, improves phase stability and overall relia-bility of the amplifier. Moreover, the amount of time necessary for the selection of transistors is significantly reduced.