Experimental and simulative investigations on stray capacitances and stray inductances of power modules

This paper presents different experimental methods for measuring parasitic capacitances and inductances of direct copper bond (DBC) based power semiconductor modules. The found parasitics are compared with finite element simulations to evaluate their accuracy. A very good match of the simulated and measured stray capacitances is found. The parasitics, which are found via simulations and experiments, are integrated into a full equivalent circuit of the power module that can be used in SPICE simulations. The model is evaluated by a comparison with double pulse measurements for three examplary operating points. Satisfying simulation results of the developed model can be shown for the given operating points.