Transformation techniques applied to a TaO memristor model to enable stable device simulations

Given the complexity of the mathematical descriptions of real nanodevices with memristor fingerprints, convergence issues often emerge in the simulation of circuits employing memristors, even for a limited number of instances. Actually the simulation of one-memristor circuits may also be troublesome for some inputs and/or initial conditions. This problem prevents a thorough test of memristor circuit designs, representing a severe obstacle towards an extensive use of memristors in electronics. In this work we propose techniques to transform a highly-reliable physics-based model of the Tantalum oxide memristor from Hewlett Packard Labs in a form which lends itself naturally to stable numerical simulations. The results of this study shall pave the way towards a more extensive exploration of the full potential of memristors in integrated circuit design.