Integration of high coherence high power broadly tunable semiconductor lasers for NIR & MIR applications: Single and dual frequency state

Laser technology is finding applications in areas such as high resolution spectroscopy, radar-lidar, velocimetry, and more recently in the THz domain such as imaging or spectroscopy, where highly coherent tunable high power light sources are required. The Vertical External Cavity Surface Emitting Laser (VECSEL) technology [1] has been identified for years as a good candidate to reach high power high coherence and broad tunability while covering a wide emission wavelength range exploiting III-V semiconductor technologies. Offering such performances in the Near- and Middle-IR range, GaAs- and Sb-based VECSEL technologies seem to be a well suited path to meet the required specifications of demanding applications. Our expertise built up in this field allows the realization of compact and low power consumption marketable products, with performances that do not exist on the market today in the 0.8–1.1 μm and 2–2.5 μm spectral range.