Modified angelov model for an exploratory GaN-HEMT technology with short, few-fingered gates

The GaN-based HEMT has emerged as a leading technology option for high-power and high-frequency applications because of its outstanding electronic properties. Angelov-GaN is one of the most popular compact models for GaN-HEMT devices. However, we observed that the standard Angelov-GaN model is unable to accurately model small gate length and gate width HEMT. In this work, we present a modified version of the Angelov-GaN model that captures dc and ac non-idealities in exploratory technology HEMTs. In order to capture these effects we extend the standard DC model using parametric analysis; for RF modeling, we use the open-short de- embedding technique to capture additional pad parasitic effects. The modelled DC I-V and bias dependent S-parameters are found to be in good agreement with measured experimental data.