Modeling of nanocluster carbon defect states & thin film transistor

Nano cluster carbons in its various forms like carbon nanotubes, fullerene and graphene have become attractive material for a wide range of application. The uniqueness of this, material is its ability to bond in different ways, including sp³, sp² and sp¹ and also exist in mixed phase mode, thus leading to many interesting properties. Nanocluster carbon films with room temperature conductivity changing over 10 orders, from 10⁻¹¹ (Ō⁻¹ cm⁻¹) to 3 x 10⁻¹ (Ō⁻¹ cm⁻¹), defect state density varying from 10¹⁶ to 10²¹ cm⁻³ eV⁻¹ were studied. The films also show some photo response. The material has been used to fabricate field assisted electron emitters, and to simulate thin film transistor and sensors. The pulsed cathodic arc seems to be a better process for controlled Nanoclusters growth than continuous cathodic arc. The DOS Model for non crystalline materials are simulated and properties are studied. The possibility of growing the material over large areas also enables us to use it for applications like sensors & medical implants on flexible substrates, and tribology.