Performance enhancement in Al0.3Ga0.7N/GaN HEMT based inverter using MOSHEMT

In this work, a 2D structure of AlGaN/GaN HEMT is designed and an inverter is implemented to investigate the switching characteristics of the device. The issues of high on-resistance of HEMT due to the occurrence of current collapse causing poor charging and discharging of the device, making it undesirable for switching circuit operations are justified through the voltage transfer characteristics (VTC) of the inverter circuit. Among the methods of reducing the on-resistance of the device, the recessed-gate structure is analysed. Further in order to prevail over the gate leakage current and high on-resistance the inverter based on metal oxide semiconductor high electron mobility transistor (MOSHEMT) is compared with the inverters designed with the conventional structure and the recessed-gate structure of HEMT. An efficient inverter with better on-off switching is obtained on improvising the HEMT to MOSHEMT. The Power Delay Product of the inverter is also calculated and its value obtained is 8.287fJ/mm. In addition to the inverter, functionality of some more logic circuits is also presented through proper dc and transient analysis.