Analytical computation of transconductance characteristics of single electron transistor

Transconductance characteristics of single electron transistor are analytically computed for different tunneling resistances and tunneling capacitances. For modeling purpose, it is assumed that source and drain ends are connected via quantum dot. Tunneling mechanism is considered as a stochastic process, and steady state master equation is solved to calculate free energy changes. Fermi Golden Rule (FGR) is considered to compute tunneling probabilities at drain and source ends. Some unusual variations are reported which sets the limit of equivalent circuit parameters for proper operation.