Toward quantum state manipulation in twin InSb/GaAs quantum dots

This paper describes a route toward quantum state manipulation by using twin InSb/GaAs quantum dots (QDs) as building blocks. The discussion on the advantage of staggered (type-II) band alignment in InSb/GaAs heterojunction is given first. For the generation of coupled/entangled electronic state, symmetric twin is desired. However, asymmetric twin is typically expected from the fabrication point of view. The localized hole states might be tuned to delocalized ones by external electric and/or magnetic fields. In addition, control and read-out of the stored information in the state can be done via optical probe with laser spectroscopy. We present here an experimental realization of twin InSb/GaAs QDs by solid source molecular beam epitaxy. The InSb QDs are formed into both single and twin rectangular-based configurations.