Ultra-low operating voltage, Poly(3-hexylthiophene-2y5-diyl) based highly light-sensitive organic field effect transistor

Photo Sensitive-Organic Field Effect Transistors (PS-OFETs) based on Poly (3-hexylthiophene-2, 5-diyl) (P3HT), with Al₂O₃-cPVA, inorganic-organic bilayer gate dielectrics system, fabricated on glass substrate show remarkable efficiency as light sensors at various incident optical power. The Indium Tin Oxide (ITO) as well as Si/SiOj free OFET devices that are of low cost, reduced operating voltage device with the combination of Aluminum Oxide and organic polymer gate dielectrics and Copper (Cu) as top contacts exhibit excellent p-channel behavior with a remarkable photo responsivity of 471.23 A.W^-1 and photo ON/OFF current ratio 3.4 with a very low operating voltage (0 to -3V) that are not observed previously. This device with high electrical stability at ambient conditions and low threshold voltage under constant electrical bias stress is expected to have potential applications in optoelectronic devices and energy efficient sensors.