Effect of X-ray irradiation on bottom-gate monolayer graphene transistors

In this paper we discuss the effects of x-ray irradiation on monolayer graphene transistor characteristics. We report monolayer graphene field effect transistors (GFETs) under x-ray irradiation with major shift in dirac point on exposure to x-ray irradiation. The irradiation causes defects in graphene and changes in GFET characteristics that can be utilized towards a radiation sensor. The current work identifies the effects of x-ray radiation on current voltage characteristics owing to the scattering with electrons and breaking of sp² bonds. Marginal change in hole mobility and significant decrease in electron mobility is reported for monolayer graphene FETs post exposure to x-ray irradiation.