An analytical model of GISTFET

In this paper an analytical model for surface potential of a p-type long channel gate induced source tunnelling FET (GISTFET) has been proposed. The proposed GISTFET is a dual material gate all around TFET structure. Here two metals M1 and M2 are shorted and biased by the same gate voltage. These two metals are so chosen that their work function difference sets up a tunnelling junction between the channel sections. As there is no any appropriate model for P-type device this analytical model has been worked out to demonstrate the independence of the device from channel doping profile, solid solubility, junction abruptness, dopant variability. This paper also gives an explanation how a high current can be achieved in this model. The proposed model helps to predict DIBL, SS and other short channel effects. It also helps to find a future CMOS model.