Optimization of electrical parameters in SiGe channel nMOSFET

In this paper, a silicon-germanium (SiGe) n-channel heterojunction MOSFET is presented under the consideration that channel is made of SiGe and source/drain regions is made of Silicon (Si). Bandgap engineering has been done to improve the electrical behavior of the device. Simulation work for different parameters on the device has been carried out and presented in the paper. The electrical characteristics of the proposed device is optimized by varying the device dimensions. Effect of mole fraction on threshold voltage (V_T), Subthreshold swing (SS), I_ON and I_OFF Current ratio is analyzed. It is seen that due to presence of SiGe channel, the proposed device shows enhancement in electrical characteristics.