Electrically tunable behavior of graphene on high-resistivity silicon substrate

The electrostatic tunability of graphene possesses interesting potential for microwave applications. We systematically investigate the electrical tuning response of the monolayer CVD grown graphene on a 500 um thick high-resistivity silicon (HRS). Coplanar transmission line embedded with 48 × 48 um² graphene flakes is manufactured through standard microfabrication process and utilized to measure the sheet resistance variation of graphene under external bias voltage. The tuning behavior agrees well with the theoretical model by rigorously solving the Maxwell's equations with the Kubo formula and is of great help for the design of graphene-incorporated switchable devices.