A high-power-density, high-speed gate driver for a 10 kV SiC MOSFET module

Several high-voltage silicon carbide (SiC) devices have been demonstrated over the past few years, and the latest-generation devices are showing even faster switching, and greater current densities. However, there are no commercial gate drivers that are suitable for these high-voltage, high-speed devices. Consequently, there has been a great research effort into the development of gate drivers for high-voltage SiC transistors. This work presents the first detailed report on the design and testing of a high-power-density, high-speed, and high-noise-immunity gate drive for a high-current, 10 kV SiC MOSFET module.