A study of different extraction techniques of nanocrystalline graphite (NCG)/p-type silicon schottky diode parameters

This article demonstrates the investigation of the Schottky barrier height and ideality factor extraction techniques of a Nano Crystalline Graphite (NCG)/p-type silicon Schottky barrier diode based on current-voltage characteristics. A series resistance of 12.5 kΩ was obtained from the linear slope of the I-V plot. By taking into account of the series resistance, different techniques of graphical fitting methods were explored. In this experiment, the Schottky barrier height (SBH) was found to be lower than found in the literature for graphene/Si Schottky diode and will be discussed in detail. However, the ideality factor of 1.1 was achieved using a reverse bias I-V plot. This shows NCG/p-Si Schottky diode followed thermionic emission mechanism.